机译:2 wt。%Al_2O_3掺杂的ZnO薄膜的光电性能以及具有超薄栅极绝缘体的Al掺杂的ZnO薄膜晶体管的特性
School of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon, 440-746, Republic of Korea;
School of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon, 440-746, Republic of Korea;
School of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon, 440-746, Republic of Korea;
School of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon, 440-746, Republic of Korea;
School of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon, 440-746, Republic of Korea;
School of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon, 440-746, Republic of Korea;
School of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon, 440-746, Republic of Korea;
School of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon, 440-746, Republic of Korea;
School of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon, 440-746, Republic of Korea;
School of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon, 440-746, Republic of Korea;
School of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon, 440-746, Republic of Korea;
School of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon, 440-746, Republic of Korea Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 440-746, Republic of Korea;
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea;
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea;
Al-doped zinc oxide; radio-frequency magnetron sputtering; hall effect measurements; UV/VIS spectroscopy; thin film transistors;
机译:Pb(Zr_(0.3)Ti_(0.7)O_3栅绝缘体的Al掺杂ZnO薄膜晶体管的研究
机译:Pb(Zr 0.3 sub> Ti 0.7 sub>)O 3 sub>栅极绝缘体的Al掺杂ZnO薄膜晶体管的研究
机译:用原子层沉积沉积ZnO通道和HFOX栅极绝缘体的薄膜晶体管的后退火温度依赖性电性能
机译:高κHfON / SiO
机译:通过脉冲激光沉积开发基于ZnO的薄膜晶体管和掺磷的ZnO和(Zn,Mg)O。
机译:原子层沉积制备Al掺杂ZnO和ZnAl2O4薄膜的电学和光学性质
机译:磁控溅射沉积al掺杂ZnO薄膜:溅射参数对电学和光学性能的影响