The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas

摘要

AlGaN/AlN/GaN and InAlN/AlN/GaN structures with 2D electron gas have been grown on sapphire substrates by metal-organic vapor-phase epitaxy. The suppression of the parasitic conductivity of buffer GaN layers was provided either by intentionally raising the density of edge dislocations or by doping with iron (GaN:Fe). It was shown that using GaN buffer layers with a better crystal perfection and more planar surface results in the electron mobility in the 2D channel for carriers becoming 1.2-1.5 times higher.