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首页> 外文期刊>Technical physics letters: Letters to the Russian journal of applied physics >Surface Topography and Optical Properties of Thin AlN Films Produced on GaAs (100) Substrate by Reactive Ion-Plasma Sputtering
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Surface Topography and Optical Properties of Thin AlN Films Produced on GaAs (100) Substrate by Reactive Ion-Plasma Sputtering

机译:通过反应离子等离子体溅射在GaAs(100)基板上产生的薄Aln薄膜的表面形貌和光学性质

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摘要

A study of the surface topography and optical characteristics of thin AlN films used as passivating and antireflection coatings deposited on n-GaAs (100) substrates by reactive ion-plasma sputtering is reported. It was found that the process conditions affect the structure and the optical characteristics of the films, which makes it possible to obtain coatings with prescribed parameters. An analysis of the results furnished by ellipsometry and atomic-force microscopy of the surface shows that the refractive index of the films is correlated with the surface structure.
机译:报道了通过反应离子等离子体溅射沉积在N-GaAs(100)基板上的钝化和抗反射涂层的薄Aln膜的表面形貌和光学特性的研究。 发现过程条件影响薄膜的结构和光学特性,这使得可以获得具有规定参数的涂层。 对由椭圆形测定法和表面的原子力显微镜的结果分析表明,膜的折射率与表面结构相关。

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