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0.52Ti 0.48O 3/PbTiO 3 superlattices revealed by aberration-corrected HAADF-STEM imaging]]>

机译:<!“:INF PLACE =”POST“> 3 / PBTIO 3 超大图示出现像差校正的HAADF-STEM晶像显影]]]>

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摘要

Tuning multiple strain and polar states of ferroelectrics by using strain engineering is an essential approach for designing multifunctional electric devices such as multiple state memories. However, integrating multiple strain states is still a challenge, and in addition, revealing such strains and the resultant polar behaviors on the atomic level remains difficult. In this work we prepare PbZr0.52Ti0.48O3/PbTiO3(PZT/PTO) superlattices on SrRuO3-buffered SrTiO3(001) substrates. Aberration-corrected high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) reveals that the superlattice is coherent in bothc(out-of-plane polar direction) anda(in-plane polar direction) domains. We find that the strain states of both PZT and PTO incandadomains are variant, leading to four special strain states. For example, the tetragonality for PTO incandadomains is 1.061 and 1.045, respectively. In contrast, PZT incdomains displays a tetragonality as giant as 1.107, which corresponds to 110?μC?cm?2spontaneous polarization, much larger than the bulk PZT; while PZT inadomains exhibits 1.010 tetragonality with about 70?μC?cm?2polarization. This study reveals a practical way to integrate multiple strain states and enhanced polarizations in ferroelectric films, which could be used as multifunctional electric elements.
机译:通过使用应变工程调整多种应变和极性铁电器状态是设计多功能电气设备,例如多个状态存储器的基本方法。然而,整合多种应变状态仍然是一个挑战,另外,揭示这种菌株和原子水平上所得到的极性行为仍然困难。在这项工作中,我们在SRRUO3缓冲SRTIO3(001)基板上准备PBZR0.52TI0.48O3 / PBTIO3(PZT / PTO)超晶格。像差校正的高角度环形暗场扫描透射电子显微镜(HAADF-Stem)揭示了超晶格在两个(面内极性方向)和A(面内极性方向)域中相干。我们发现,PZT和PTO Incandomains的菌株状态是变体,导致四种特殊应变状态。例如,PTO Incandomains的四锥分别为1.061和1.045。相反,PZT的组成显示为巨大的四角形,为1.107,其对应于110Ω·μc?cm?2个分量极化,比散装PZT大得多;虽然PZT inadomains表现出1.010四极,但大约70Ωμc?2分散。本研究揭示了一种在铁电薄膜中集成多种应变状态和增强的偏振的实用方法,其可以用作多功能电气元件。

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