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Criteria and considerations for preparing atom-probe tomography specimens of nanomaterials utilizing an encapsulation methodology

机译:利用封装方法制备纳米材料原子探测断层扫描标本的标准和考虑因素

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摘要

Atom-probe tomography (APT) is a powerful method for characterization of nanomaterials due to its atomic-ppm level detection limit and Angstrom spatial resolution. Sample preparation for nanomaterials is, however, challenging because of their small dimensions and complicated geometries. Nanowires, with their high geometrical aspect ratio and nanowire length, 10 to 100 times their typical diameters, are highly suitable specimens for APT analyses, which can be transferred to silicon microposts using a nanomanipulator for direct APT measurements. This method is, however, prone to poor alignment and a limited field-of-view (FOV). Most importantly, direct implementation of APT with high aspect ratio nanowires may yield a low success rate of similar to 30%, due to the high electric fields (10-40 V nm(-1)) associated with APT. While this is acceptable for samples analyzed solely by APT, a low sample yield makes it challenging to perform correlative experiments on the same nanowire specimen, utilizing other sophisticated characterization instruments. Herein, we introduce a general strategy for preparing high-yield APT specimens by encapsulating the nanowires utilizing a conformal atomic-layer deposition (ALD) coating followed by site-specific lift-out using a dual-beam focused-ion beam microscope. The ALD deposited coating forms strong chemical bonds with the Si nanowires yielding a high-quality and robust interface. The evaporation electric fields of the ALD coating and the nanowires are tuned by changing laser energy to obtain a uniform evaporation rate. The strong adhesion of the ALD-coating/nanowire interface and uniform evaporation rate produce a > 90% specimen yield, with small concentration of reconstruction artifacts in 3-D. Simultaneously, the field-of-view is enhanced and the surface of the nanowire becomes visible, which makes the study of surface adsorption, segregation and oxidation possible. We utilized ALD-ZnO coated silicon nanowires as an example for investigating the criteria for choosing coating materials, laser pulse energy, laser direction, sample geometry, and substrate materials. The same criteria and considerations are applicable for preparing specimens of nanoparticles and 2-D material. (C) 2017 Elsevier B.V. All rights reserved.
机译:原子探测断层扫描(APT)是一种强大的方法,用于表征纳米材料由于其原子PPM水平检测极限和埃赫斯特罗姆空间分辨率。然而,纳米材料的样品制备是挑战,因为它们的尺寸小和复杂的几何形状。纳米线具有高几何纵横比和纳米线长度,其典型直径的10至100倍,是适当的PEAT分析标本,其可以使用纳米操纵器转移到硅片微孔,以便直接测量。然而,这种方法容易达到差的对齐和有限的视野(FOV)。最重要的是,由于高电场(10-40V nm(-1))与APT相关的高电场(10-40V nm(-1)),最重要的是,具有高纵横比纳米线的APT的直接实现可以产生类似于30%的低成功率。虽然这对于仅通过APT分析的样品是可以接受的,但是低样品产率使得在使用其他复杂的表征仪器上对同一纳米线标本进行相关实验,这使得具有挑战性。在此,我们介绍一种通过使用双光束聚焦离子束显微镜将纳米线包封纳米线来制备高屈服APT标本的一般策略。使用双光束聚焦离子束显微镜。 ALD沉积的涂层与Si纳米线形成强大的化学键,产生高质量和强大的界面。通过改变激光能量以获得均匀的蒸发速率来调谐ALD涂层和纳米线的蒸发电场。铝涂层/纳米线界面的强粘附性和均匀的蒸发速率产生> 90%的样品产量,在3-D中具有小的重建伪像。同时,增强视场,纳米线的表面变得可见,这使得表面吸附,偏析和氧化成为可能。我们利用ALD-ZnO涂覆的硅纳米线作为研究用于选择涂层材料,激光脉冲能量,激光方向,样品几何和基材材料的标准的示例。相同的标准和考虑因素适用于制备纳米颗粒和2-D材料的标本。 (c)2017 Elsevier B.v.保留所有权利。

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