In situ sulfurization to generate Sb-2(Se1-xSx)(3) alloyed films and their application for photovoltaics

摘要

Because of its tunable band gap and band position, Sb-2(Se1-xSx)(3) (0x1) is a promising light-absorbing material for photovoltaic device applications. However, no systematic study on the synthesis and characterization of single-phase polycrystalline Sb-2(Se1-xSx)(3) thin films has been reported. Through introducing in situ sulfurization into the rapid thermal evaporation process, a series of single-phase, highly crystalline Sb-2(Se1-xSx)(3) films with x=0.09, 0.20, 0.31, and 0.43 were successfully obtained, with the corresponding band gap, band position and film morphology fully revealed. Futhermore, solar cells with superstrate ITO/CdS/Sb-2(Se1-xSx)(3)/Au structure were fabricated and carefully optimized. Finally, a champion device having 5.79% solar conversion efficiency was obtained employing uniform Sb-2(Se0.80S0.20)(3) absorber layer. Our experimental investigation confirmed that Sb-2(Se1-xSx)(3) is indeed a very promising absorber material worth further optimization. Copyright (c) 2016 John Wiley & Sons, Ltd.