MANUFACTURE OF CUIN(SE1-XSX)2 MIXED CRYSTAL THIN FILM

摘要

PURPOSE:To obtain the manufacturing method of a CuIn(Se1-xSx)2 mixed crystal thin film excellent in operation properties and composition controllability wherein the ratio of S and Se taken in a film can be easily controlled. CONSTITUTION:An Mo film of about 1mum in thickness is formed on a substrate of NO.7059 Corning glass by a sputtering method. On the Mo film, Cu, In and S are individually deposited by a vacuum evaporation method in the manner in which the atomic ratio is Cu:In:S=1:1:2.5 and film thicknesses are 2000Angstrom (angstroms), 4500Angstrom and 20000Angstrom , respectively. This lamination film is put in a heat treatment furnace, and the temperature is raised up to 400 deg.C at a rate of 5 deg.C/min while N2 gas is made to flow. After the temperature is kept at 400 deg.C for one hour, H2Se gas is introduced. The gas flow rate is so adjusted that H2Se/(N2+H2Se) is equal to 10%. After 45 minutes, the H2Se gas flow is stopped, and cooling down to the room temperature is performed in N2 gas flow.