MANUFACTURING METHOD AND EQUIPMENT OF MIXED CRYSTAL SEMICONDUCTOR THIN FILM USING ALKALINE EARTH METAL

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method and equipment of a mixed crystal semiconductor thin film using alkaline earth metal which has a large forbidden band width of about 1.4 eV and is made of cheap materials.;SOLUTION: The manufacturing method comprises: depositing only Ba2 under ultra high vacuum in the state where Si (111) substrate 1 is heated at 600°C; growing BaSi₂ thin film 3 having a film thickness of about 20 nm; supplying Sr6 on the BaSi₂ thin film 3 by using the BaSi₂ thin film 3 as a template (seed crystal) and by fixing a substrate temperature and supply of Ba4 and Si5 to the same status, respectively; and carrying out an epitaxial growth of Ba_1-XSr_XSi₂ film 7.;COPYRIGHT: (C)2006,JPO&NCIPI