Fabrication of Cu2ZnSnS4 thin films by sulfurization process from quaternary compound for photovoltaic device applications

摘要

Cu2ZnSnS4 thin films were fabricated by sulfurization of the precursor which was evaporated from quaternary compound on Mo/soda lime glass substrate. The sulfurization temperature was varied from 400℃ to 560℃. These samples were characterized by means of X-ray fluorescence analysis, electron probe microanalysis, X-ray diffraction and scanning electron microscopy. XRD studies showed that the thin film sulfurized at 560℃ had a kesterite Cu2ZnSnS4 structure with a single phase and the preferred orientation to the 112 plane. The full width at half maximum of 112 peak in XRD patterns decreased with increasing the annealing temperature. EPMA analysis showed that Zn and Sn content had nearly stoichiometric composition and Cu content was slightly rich. SEM images demonstrated that the grain size in Cu2ZnSnS4 thin films increased with increasing the annealing temperature.