Numerical design and investigation of an optically pumped 1.55 mu m single quantum dot photonic crystal-based laser

摘要

Quantum dot microlasers are promising for application in photonic integrated circuits and lab-on-a-chip systems. In this article, we sought to design an optically pumped single quantum dot photonic crystal microlaser for 1.55 mu m telecom-band operation. In the proposed scheme, an InAs quantum dot placed in the point defect of an HIP photonic crystal slab acts as a laser active region. The significance of the proposed laser is its cavity design that supports two high-quality resonant modes at the pump and lasing wavelengths. Hence, the pump resonantly excites the active region. Simulations demonstrate satisfactory lasing characteristics such as a lasing threshold power of 55 nW and a spectral linewidth of similar to 0.019 nm for the designed quantum dot photonic crystal-based laser.