Biexciton in II-VI quantum dots with different localization potentials

摘要

We present a comparative study of the influence of the form of a localization potential on the binding energy of the biexciton in spherically symmetric quantum dots based on II-VI compounds. The proposed criterion for the comparison of potentials of different forms-the box potential, the harmonic oscillator, and the Gaussian potential-is based on the identical localization of charge carriers of the same sign in these potentials. Calculations of the biexciton binding energy have been performed using the variational method within the framework of the kp-perturbation theory taking into account additional polarization terms in the wave functions of the electron and hole subsystems, as well as the complex structure of the valence band. The obtained results have demonstrated that the presence of a smoothly varying finite-height potential in Cd(Zn)Se/ZnSe quantum dots can lead to a more efficient localization in the case of the biexciton in comparison with the exciton, which is of interest for the implementation of fast-acting quantum light emitters.