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首页> 外文期刊>Physica, E. Low-dimensional systems & nanostructures >Facile synthesis and characterization of graphene oxide/tungsten oxide thin film supercapacitor for electrochemical energy storage
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Facile synthesis and characterization of graphene oxide/tungsten oxide thin film supercapacitor for electrochemical energy storage

机译:氧化石墨烯氧化物/钨氧化物薄膜超级电容器的构成与表征电化学储存

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The capacitance performance exhibited by Graphene oxide/Tungsten Oxide substances is quite high in terms of potential supercapacitor applications. This study involves the synthesize of GO through Hummers Method and coating it on the substrates. Accordingly, thin film supercapacitor structures of GO/WO3 on ITO, FTO, PMMA and Glass substrates were successfully produced through CBD (Chemical Bath Deposition) method. Structural properties were characterized by XRD, SEM, AFM, ATR, and UV. I-V and C-V curves were investigated in the determined voltage range (from -0.2-1.2 V) at 25, 50, 75 and 100 mV/s various scanning potential. Regarding the maximum capacitance and energy intensity of the thin films, the maximum capacitance was 268.5 F/g and the energy intensity was calculated as 52.2 Wh/kg for glass/GO/WO3 thin film; the maximum capacitance was 259.7 F/g, and the energy intensity was calculated as 50.4 Wh/kg for PMMA/GO/WO3, the maximum capacitance was 158.5 F/g, and the energy intensity was calculated as 30.8 Wh/kg for FTO/GO/WO3, and finally the maximum capacitance was 106 F/g, and the energy intensity was calculated as 20.6 Wh/kg for ITO/GO/WO3.
机译:石墨烯氧化物/氧化钨物质表现出的电容性能在潜在的超级电容器应用方面非常高。该研究涉及通过悍马方法的合成,并将其涂在基板上。因此,通过CBD(化学浴沉积)方法成功地制备了对ITO,FTO,PMMA和玻璃基板上的GO / WO3的薄膜超级电容器结构。结构性质的特征是XRD,SEM,AFM,ATR和UV。在25,50,75和100mV / s的各种扫描电位的确定电压范围(从-0.2-1.2 v)中研究了I-V和C-V曲线。关于薄膜的最大电容和能量强度,最大电容为268.5F / g,并且计算为玻璃/去/ WO3薄膜52.2WH / kg的能量强度;最大电容为259.7 f / g,并且能量强度计算为PMMA / GO / WO3的50.4WH / kg,最大电容为158.5 f / g,并且能量强度计算为FTO / kg为30.8WH / kg / Go / WO3,最后最大电容为106 f / g,并且能量强度计算为ITO / GO / WO3的20.6WH / kg。

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