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首页> 外文期刊>Electrochimica Acta >Electrochemical energy storage of nanocrystalline vanadium oxide thin films prepared from various plating solutions for supercapacitors
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Electrochemical energy storage of nanocrystalline vanadium oxide thin films prepared from various plating solutions for supercapacitors

机译:用于超级电容器的各种电镀溶液制备的纳米晶钒氧化物薄膜的电化学能量储存

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Nanocrystalline V2O5 is electrochemically deposited onto an indium tin oxide substrate in VOSO4-ebased solution with various acetate additives, i.e., lithium acetate, sodium acetate, and potassium acetate. The deposition conditions including pH value and acetate additive are found to be crucial factors in influencing the deposition rate, crystallinity, and porous structure of V2O5 electrodes. The electrochemical capacitive behavior of the deposited V2O5 electrodes in KCl electrolyte is investigated by cyclic voltammetry at various scan rates, ranged from 5 to 200 mV s(-1). The specific capacitance of V2O5 electrode prepared from the potassium acetate containing plating solution is up to 350 F g(-1), indicating that the level of K+ occupancy reaches as high as 0.71. This suggests that the occupancy of K+ ions is in tetrahedral and eight coordinated sites in V2O5 crystals. The capacitance retention at 200 mV s(-1) compared to that at 5 mV s(-1) reaches to 75% for this electrode. The enhanced performance is mainly attributed to the highly porous structure which significantly increases the active sites, imparts oxide/electrolyte interfaces for energy storage, and subsequently enhances the rate of insertion/extraction of K+ ions. The V2O5 electrode is capable of delivering high energy density up to 48.6 Wh kg(-1), demonstrating a significant potential for thin-film energy storage devices. (C) 2018 Elsevier Ltd. All rights reserved.
机译:用各种乙酸盐添加剂,即乙酸锂,乙酸钾和乙酸钾,将纳米晶体V2O5电化学沉积在Voso4-Ebased溶液中的氧化铟锡底物上。发现包括pH值和乙酸盐添加剂的沉积条件是影响V2O5电极的沉积速率,结晶度和多孔结构的关键因素。通过各种扫描速率通过循环伏安法研究沉积的V2O5电极的电化学电容性能,从各种扫描速率进行循环伏安法,范围为5至200mV S(-1)。由含醋酸钾溶液制备的V2O5电极的比电容高达350°F G(-1),表明k +占用水平达到0.71。这表明k +离子的占用率在V2O5晶体中是四面体和八个协调位点。与该电极的5mV S(-1)的5mV s(-1)相比,电容保持率为5mVs(-1)。增强的性能主要归因于高度多孔结构,该结构显着增加了活性位点,赋予储能氧化物/电解质界面,随后增强了K +离子的插入/提取速率。 V2O5电极能够提供高达48.6WHKG(-1)的高能量密度,证明薄膜能量存储装置的显着潜力。 (c)2018年elestvier有限公司保留所有权利。

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