Organic molecule stabilized bismuth sulfide nanoparticles: A potential system for bistable resistive memory application

摘要

The performance of the microelectronic devices depends on the material used for the fabrication of the device and also the device architecture. In this paper, we demonstrate the synthesis of 'organic molecule stabilized bismuth sulfide nanoparticles' (BSN) by applying a one-pot, wet-chemical route. The as-synthesized material was characterized using microscopic and optical techniques. The organic-inorganic composite system displayed electronic memory effect based on the unipolar resistive switching phenomenon. The current-voltage characteristic of the device is fitted with the thermionic emission and space charge limited current model for the OFF-state, whereas, the ON-state is fitted with the combination of trapped-space charge limited current and trap-free space charge limited current model. The study of endurance and the nonvolatile behaviour of the device was performed for 10(3) cycles and for 2 x 10(3)s, respectively. The system demonstrated that the power drops do not have any impact on either 'ON' or 'OFF' state.