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Effect of conduction band non-parabolicity on bound polaron fundamental state in GaN/InN core shell quantum dots

机译:导电带非剖析对GaN / Inn Core Shell量子点结合极化焦质基本状态的影响

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摘要

In this paper, we present a theoretical investigation on the polaronic, impurity position and quantum confinement effects on the ground state binding energy of single dopant confined in cubic GaN/InN core/shell quantum dots. Within the framework of the effective mass and non-parabolic approaches, the Schrodinger equation is numerically solved by using the Ritz variational method. The polaronic corrections are included via the renormalization of the effective mass and a phonon-modified electron-impurity Coulombic interaction. It is found that the influence of both electron-phonon interaction and the band non-parabolicity result in the reduction of the ground state binding energy. The inclusion of the non-parabolicity leads to stronger decrease of the magnitude of the impurity binding energy. This points at the importance of including such element for an appropriate quantitative description of the spectrum of coupled electron-donor-impurity systems in nitride core/shell quantum dots.
机译:在本文中,我们对立方GaN / Inn核心/壳量子点掺入的单掺杂剂的地面末端结合能量的极性,杂质位置和量子限制效应的理论研究。 在有效质量和非抛物线方法的框架内,通过使用Ritz变分方法来数量地解决了Schrodinger方程。 优势校正通过有效质量的重整化和声子改性的电子 - 杂质库仑相互作用。 发现电子 - 声子相互作用和带非抛物度的影响导致接地状态结合能的减少。 包含非抛散性导致杂质结合能量的幅度较强。 该目的是在氮化物芯/壳量子点中的偶联电子供体 - 杂质系统的谱的适当定量描述的重要性。

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