机译:导电带非剖析对GaN / Inn Core Shell量子点结合极化焦质基本状态的影响
Mohammed V Univ Rabat ENSET Grp Optoelect Semicond &
Nanomat LaMCScI Rabat Morocco;
Univ Autonoma Estado Morelos Ctr Invest Ciencias IICBA Av Univ 1001 Cuernavaca 62209 Morelos Mexico;
Mohammed V Univ Rabat ENSET Grp Optoelect Semicond &
Nanomat LaMCScI Rabat Morocco;
Mohammed V Univ Rabat ENSET Grp Optoelect Semicond &
Nanomat LaMCScI Rabat Morocco;
Univ Lorraine Inst Chim Phys &
Mat LCP A2MC Metz France;
Core-shell quantum dots; Donor; Non-parabolicity; Binding energy; Phonons;
机译:导电带非剖析对GaN / Inn Core Shell量子点结合极化焦质基本状态的影响
机译:导带非抛物线型对掺锌GaN / AlGaN量子点中施主态的影响
机译:关于非参数频段模型中掺杂GaN / Inn球芯/壳壳量子点的电子特性的LO-声音和介电偏振效应
机译:表面改性对GaN / InN核/壳纳米线的带隙和电子态的影响
机译:碲化镉,碲化镉/硫化镉核/壳和碲化镉/硫化镉/硫化锌核/壳/壳的量子点研究
机译:导带非共抛物对GaAs / Ga1-xAlxAs双半V形量子阱中非线性光学性质的影响
机译:纤锌矿GaN导带的非抛物线性