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首页> 外文期刊>Physica, E. Low-dimensional systems & nanostructures >Stark shift of hydrogenic and non-hydrogenic donor impurity excited states in parabolic quantum dot: Under the effect of electric field and temperature
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Stark shift of hydrogenic and non-hydrogenic donor impurity excited states in parabolic quantum dot: Under the effect of electric field and temperature

机译:抛物线量子点中的氢和非氢化供体杂质激发态的STARK偏移:在电场和温度的影响下

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In the present study, we discuss theoretically the influence of lateral and normal electric field on the hydrogenic donor impurity (HDI) and non-hydrogenic donor impurity (NHDI) excited state energies in a cylindrical quantum dot (CQD) with parabolic potential. The variational approach is employed to obtain the donor impurities ground and excited state energies in the framework of the effective mass approximation; consequently, the binding energy is calculated. The comparisons between the influence of the lateral and the normal electric fields on the Stark shift of the electron (Delta E-1) and Stark shift of the HDI (Delta E-i(mp)) are given. It has been found that the direction of the electric field has a considerable effect on Delta E-imp. Our results showed that Delta E-imp has shown a blue shift for some HDI excited states and the other states showed a red shift. The results of the combined effect of the lateral electric field and the temperature on the HDI and NHDI binding energy have been presented. It has been indicated that the HDI states in small CQDs are very sensitive to the weak lateral electric field strength than both the normal electric field strength and the temperature values. More, the Stark shift in HDI ground state energy is more affected by the temperature in large CQDs than in small CQDs.
机译:在本研究中,我们从理论上论述侧向和正常电场对具有抛物面电位的圆柱形量子点(CQD)中的氢化供体杂质(HDI)和非氢化供体杂质(NHDI)激发状态能的影响。在有效质量近似的框架中,采用变分方法来获得供体杂质地面和激发状态能量;因此,计算结合能量。给出了横向和正常电场对电子(Delta E-1)的STARK偏移和HDI的STARK偏移(Delta E-I(MP))的影响之间的比较。已经发现,电场的方向对Delta E-Imp具有相当大的影响。我们的研究结果表明,Delta E-imp已经为某些HDI激发状态显示出蓝色转变,另一个州表现出红转。已经介绍了横向电场和温度对HDI和NHDI结合能量的组合效果的结果。已经表明,小CQD中的HDI状态对弱横向电场强度比正常电场强度和温度值非常敏感。更多,HDI接地状态能量的STARK偏移受到大CQDS的温度比小CQD的温度更大。

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