Study of ac and dc electrical resistivity variation with high pressure of as-grown pure, indium and antimony doped SnS single crystals

摘要

The direct vapour transport technique grown single crystals of pure SnS, indium (5 and 15 at%) doped SnS and antimony (5 and 15 at%) doped SnS are used in the present study. The as-grown single crystals are completely characterized. The single crystal growth and comprehensive characterization results are presented in another research paper of the authors. All the as-grown single crystals are p-type semiconductors. The ac and dc electrical resistivity variation with high pressure of the as-grown single crystals up to 5 GPa are measured. The obtained ac and dc electrical resistivity variation with high pressure results are deliberated in this paper.