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Abnormal drop in electrical resistivity with impurity doping of single-crystal Ag

机译:单晶银的杂质掺杂导致电阻率异常下降

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摘要

Resistivity is an intrinsic feature that specifies the electrical properties of a material and depends on electron-phonon scattering near room temperature. Reducing the resistivity of a metal to its potentially lowest value requires eliminating grain boundaries and impurities, but to date few studies have focused on reducing the intrinsic resistivity of a pure metal itself. We could reduce the intrinsic resistivity of single-crystal Ag, which has an almost perfect structure, by impurity doping it with Cu. This paper presents our results: resistivity was reduced to 1.35 μΩ>·cm at room temperature after 3 mol% Cu-doping of single-crystal Ag. Various mechanisms were examined in an attempt to explain the abnormal behavior.
机译:电阻率是一种固有的特征,它确定了材料的电性能,并取决于室温附近的电子声子散射。将金属的电阻率降低到可能的最低值需要消除晶界和杂质,但是迄今为止,很少有研究致力于降低纯金属本身的固有电阻率。我们可以通过杂质掺杂铜来降低具有几乎完美结构的单晶银的本征电阻率。本文介绍了我们的结果:在室温下,单晶Ag掺杂3 Cumol%的Cu后,电阻率在室温下降低至1.351.μΩ>· cm。检查了各种机制以试图解释异常行为。

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