Light-induced lifetime degradation effects at elevated temperature in Czochralski-grown silicon beyond boron-oxygen-related degradation

摘要

The effect of 'Light and elevated Temperature Induced Degradation' (LeTID) of the carrier lifetime is well known from multicrystalline silicon (mc-Si) wafers and solar cells. In this contribution, we perform a series of carrier lifetime measurements to examine, whether the same effect may also be observable in boron-doped Czochralski-grown silicon (Cz-Si). The Cz-Si samples of our study are illuminated (i) at room temperature, (ii) under standard regeneration conditions eliminating the boron-oxygen (BO) related defect (i.e. at 185 degrees C) and (iii) at a temperature of 80 degrees C, typical for the examination of the LeTID effect in me-Si. We observe the typical decay of the carrier lifetime due to the activation of the BO-related defect. Beyond the BO degradation, applying standard solar cell processes, there is no indication for the activation of a second defect. On samples, whose surfaces are passivated by fired hydrogen-rich silicon nitride layers, an additional bulk lifetime degradation effect on a long timescale is observed in the Cz-Si material. However, defect generation rate and injection dependence of the lifetime suggest another defect type than the mc-Si-specific LeTID defect. We conclude that by applying processing steps that trigger LeTID in me-Si, the same defect does not occur in the Cz-Si samples examined in this study. On a long timescale, however, a hitherto unknown type of defect is activated, which is different from the me-Si-specific LeTID defect. A careful differentiation between the various kinds of recombination centres which may form during illumination at elevated temperatures is hence of utmost importance.