Four‐Bits‐Per‐Cell Operation in an HfO <sub xmlns='http://www.wiley.com/namespaces/wiley'>2</sub>2 ‐Based Resistive Switching Device

Kim Gun Hwan; Ju Hyunsu; Yang Min Kyu; Lee Dong Kyu; Choi Ji Woon; Jang Jae Hyuck; Lee Sang Gil; Cha Ik Su; Park Bo Keun; Han Jeong Hwan; Chung Taek‐Mo; Kim Kyung Min; Hwang Cheol Seong; Lee Young Kuk

摘要

Abstract > The quadruple‐level cell technology is demonstrated in an Au/Al <sub>2</sub> O <sub>3</sub> /HfO <sub>2</sub> /TiN resistance switching memory device using the industry‐standard incremental step pulse programming (ISPP) and error checking/correction (ECC) methods. With the highly optimistic properties of the tested device, such as self‐compliance and gradual set‐switching behaviors, the device shows 6σ reliability up to 16 states with a state current gap value of 400 nA for the total allowable programmed current range from 2 to 11 μA. It is demonstrated that the conventional ISPP/ECC can be applied to such resistance switching memory, which may greatly contribute to the commercialization of the device, especially competitively with NAND flash. A relatively minor improvement in the material and circuitry may enable even a five‐bits‐per‐cell technology, which can hardly be imagined in NAND flash, whose state‐of‐the‐art multiple‐cell technology is only at three‐level (eight states) to this day. </abstract> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> <div class="translation abstracttxt"> <span class="zhankaihshouqi fivelineshidden" id="abstract"> <span>机译：</span><Abstract XMLNS =“http://www.wiley.com/namespaces/wiley”type =“main”xml：lang =“en”> <title type =“main”>抽象</ title> >四肢素 - 使用行业标准增量，在Au / Al <sub> 2 </ sub> O <sub> 3 </ sub> / hfo <sub> 2 </ sub> /锡电阻切换存储器中进行了level细胞技术步进脉冲编程（ISPP）和错误检查/校正（ECC）方法。通过测试设备的高度乐观特性，例如自智能和逐渐设定切换行为，该装置可显示6σ可靠性，最多16个状态，状态电流间隙值为400 NA，用于总允许的编程电流范围为2到11μA。证明传统的ISPP / ECC可以应用于这种电阻切换存储器，这可能极大地有助于设备的商业化，特别是与NAND闪光有竞争力。材料和电路的相对较小的改进可以使得甚至可以实现五位的每小区技术，这几乎可以在NAND闪存中想象，其最先进的多电池技术仅在三级（八个州）到这一天。 </ p> </ abstract> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> </div> <div class="record"> <h2 class="all_title" id="enpatent33" >著录项</h2> <ul> <li> <span class="lefttit">来源</span> <div style="width: 86%;vertical-align: text-top;display: inline-block;"> <a href='/journal-foreign-28247/'>《Small》</a> <b style="margin: 0 2px;">|</b><span>2017年第40期</span><b style="margin: 0 2px;">|</b><span>共1页</span> </div> </li> <li> <div class="author"> <span class="lefttit">作者</span> <p id="fAuthorthree" class="threelineshidden zhankaihshouqi"> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Kim Gun Hwan&option=202" target="_blank" rel="nofollow">Kim Gun Hwan;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Ju Hyunsu&option=202" target="_blank" rel="nofollow">Ju Hyunsu;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Yang Min Kyu&option=202" target="_blank" rel="nofollow">Yang Min Kyu;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Lee Dong Kyu&option=202" target="_blank" rel="nofollow">Lee Dong Kyu;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Choi Ji Woon&option=202" target="_blank" rel="nofollow">Choi Ji Woon;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Jang Jae Hyuck&option=202" target="_blank" rel="nofollow">Jang Jae Hyuck;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Lee Sang Gil&option=202" target="_blank" rel="nofollow">Lee Sang Gil;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Cha Ik Su&option=202" target="_blank" rel="nofollow">Cha Ik Su;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Park Bo Keun&option=202" target="_blank" rel="nofollow">Park Bo Keun;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Han Jeong Hwan&option=202" target="_blank" rel="nofollow">Han Jeong Hwan;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Chung Taek‐Mo&option=202" target="_blank" rel="nofollow">Chung Taek‐Mo;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Kim Kyung Min&option=202" target="_blank" rel="nofollow">Kim Kyung Min;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Hwang Cheol Seong&option=202" target="_blank" rel="nofollow">Hwang Cheol Seong;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Lee Young Kuk&option=202" target="_blank" rel="nofollow">Lee Young Kuk;</a> </p> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zkzz" style="display: none;">展开▼</span> </div> </li> <li> <div style="display: flex;"> <span class="lefttit">作者单位</span> <div style="position: relative;margin-left: 3px;max-width: 639px;"> <div class="threelineshidden zhankaihshouqi" id="fOrgthree"> <p>Center for Thin‐Film MaterialsKorea Research Institute of Chemical Technology (KRICT)141 Gajeong‐Ro Yuseong‐Gu Daejeon 34114 Republic of Korea;</p> <p>Center for Opto‐Electronic Materials and DevicesKorea Institute of Science and Technology (KIST)Seoul 02792 Republic of Korea;</p> <p>School of Electrical and Electronics EngineeringYonsei University262 Seongsanno Seodaemun‐gu Seoul 120‐749 Republic of Korea;</p> <p>Department of Materials Science and EngineeringYonsei University262 Seongsanno Seodaemun‐gu Seoul 120‐749 Republic of Korea;</p> <p>Center for Thin‐Film MaterialsKorea Research Institute of Chemical Technology (KRICT)141 Gajeong‐Ro Yuseong‐Gu Daejeon 34114 Republic of Korea;</p> <p>Center for Electron Microscopy ResearchKorea Basic Science Institute (KBSI)169‐148 Gwahak‐ro Yuseong‐gu Daejeon 34133 Republic of Korea;</p> <p>Center for Electron Microscopy ResearchKorea Basic Science Institute (KBSI)169‐148 Gwahak‐ro Yuseong‐gu Daejeon 34133 Republic of Korea;</p> <p>Center for Opto‐Electronic Materials and DevicesKorea Institute of Science and Technology (KIST)Seoul 02792 Republic of Korea;</p> <p>Center for Thin‐Film MaterialsKorea Research Institute of Chemical Technology (KRICT)141 Gajeong‐Ro Yuseong‐Gu Daejeon 34114 Republic of Korea;</p> <p>Center for Thin‐Film MaterialsKorea Research Institute of Chemical Technology (KRICT)141 Gajeong‐Ro Yuseong‐Gu Daejeon 34114 Republic of Korea;</p> <p>Center for Thin‐Film MaterialsKorea Research Institute of Chemical Technology (KRICT)141 Gajeong‐Ro Yuseong‐Gu Daejeon 34114 Republic of Korea;</p> <p>Hewlett Packard LabsHewlett Packard EnterprisePalo Alto CA 94304 USA;</p> <p>Department of Materials Science and Engineering and Inter‐University Semiconductor Research CenterSeoul National UniversitySeoul 08826 Republic of Korea;</p> <p>Center for Thin‐Film MaterialsKorea Research Institute of Chemical Technology (KRICT)141 Gajeong‐Ro Yuseong‐Gu Daejeon 34114 Republic of Korea;</p> </div> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zhdw" style="display: none;">展开▼</span> </div> </div> </li> <li > <span class="lefttit">收录信息</span> <span style="width: 86%;vertical-align: text-top;display: inline-block;"></span> </li> <li> <span class="lefttit">原文格式</span> <span>PDF</span> </li> <li> <span class="lefttit">正文语种</span> <span>eng</span> </li> <li> <span class="lefttit">中图分类</span> <span><a href="https://www.zhangqiaokeyan.com/clc/6960.html" title="特种结构材料">特种结构材料;</a></span> </li> <li class="antistop"> <span class="lefttit">关键词</span> <p style="width: 86%;vertical-align: text-top;"> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=error checking/correction (ECC) algorithm&option=203" rel="nofollow">error checking/correction (ECC) algorithm;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=HfO 2&option=203" rel="nofollow">HfO 2;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=incremental step pulse programming (ISPP)&option=203" rel="nofollow">incremental step pulse programming (ISPP);</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=quadruple‐level cell (QLC)&option=203" rel="nofollow">quadruple‐level cell (QLC);</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=resistive switching (RS) memory&option=203" rel="nofollow">resistive switching (RS) memory;</a> </p> <div class="translation"> 机译：错误检查/校正（ECC）算法;HFO 2;增量步长脉冲编程（ISPP）;四重级单元（QLC）;电阻切换（RS）内存; </div> </li> </ul> </div> </div> <div class="literature cardcommon"> <div class="similarity "> <h3 class="all_title" id="enpatent66">相似文献</h3> <div class="similaritytab clearfix"> <ul> <li class="active" >外文文献</li> <li >中文文献</li> <li >专利</li> </ul> </div> <div class="similarity_details"> <ul > <li> <div> <b>1. </b><a class="enjiyixqcontent" href="/journal-foreign-detail/0704024267060.html">Four‐Bits‐Per‐Cell Operation in an HfO <sub xmlns="http://www.wiley.com/namespaces/wiley">2</sub>2 ‐Based Resistive Switching Device</a> <b>[J]</b> . <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Kim Gun Hwan&option=202" target="_blank" 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ISBN: 0-471-29805-0</a> <b>[O] </b> . <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> </a> <span>2001</span> </span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：催化不对称合成第二版。奥利马（Iwao Ojima）（编辑）Wiley-VCH：纽约（http://www.wiley.com/）。 2000。页数：XIV864页精装。价格：169.-欧元/330.54 DM / 294.- SFR。国际标准书号（ISBN）：0-471-29805-0</span> </p> </li> <li> <div> <b>7. </b><a class="enjiyixqcontent" href="/open-access_resources_thesis/01000130110912.html">On stability, <mml:math altimg="si1.gif" display="inline" overflow="scroll" xmlns:xocs="http://www.elsevier.com/xml/xocs/dtd" xmlns:xs="http://www.w3.org/2001/XMLSchema" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns="http://www.elsevier.com/xml/ja/dtd" xmlns:ja="http://www.elsevier.com/xml/ja/dtd" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:tb="http://www.elsevier.com/xml/common/table/dtd" xmlns:sb="http://www.elsevier.com/xml/common/struct-bib/dtd" xmlns:ce="http://www.elsevier.com/xml/common/dtd" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:cals="http://www.elsevier.com/xml/common/cals/dtd"><mml:msub><mml:mrow><mml:mi>L</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math>-gain and <mml:math altimg="si2.gif" display="inline" overflow="scroll" xmlns:xocs="http://www.elsevier.com/xml/xocs/dtd" xmlns:xs="http://www.w3.org/2001/XMLSchema" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns="http://www.elsevier.com/xml/ja/dtd" xmlns:ja="http://www.elsevier.com/xml/ja/dtd" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:tb="http://www.elsevier.com/xml/common/table/dtd" xmlns:sb="http://www.elsevier.com/xml/common/struct-bib/dtd" xmlns:ce="http://www.elsevier.com/xml/common/dtd" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:cals="http://www.elsevier.com/xml/common/cals/dtd"><mml:msub><mml:mrow><mml:mi>H</mml:mi></mml:mrow><mml:mrow><mml:mi>∞</mml:mi></mml:mrow></mml:msub></mml:math> control for switched systems</a> <b>[O] </b> . <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Jun Zhao&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">Jun Zhao,</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=David J. Hill&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">David J. Hill </a> <span>2008</span> </span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：在稳定性上，<MML：MATH ALTIMG =“SI1.GIF”显示=“内联”overflow =“滚动”XMLNS：XOCS =“http://www.elsevier.com/xml/xocs/dtd”xmlns：xs =“ http://www.w3.org/2001/xmlschema“xmlns：xsi =”http://www.w3.org/2001/xmlschema-instance“xmlns =”http://www.elsevier.com/xml/ JA / DTD“XMLNS：JA =”http://www.elsevier.com/xml/ja/dtd“xmlns：mml =”http://www.w3.org/1998/math/mathml“xmlns：tb = “http://www.elsevier.com/xml/common/table/dtd”xmlns：sb =“http://www.elsevier.com/xml/common/struct-bib/dtd”xmlns：ce =“http ：//www.elsevier.com/xml/common/dtd“xmlns：xlink =”http://www.w3.org/1999/xlink“xmlns：cals =”http://www.elsevier.com/xml / Common / Cals / DTD“> <MML：MSUB> <MML：MROW> <MML：MI> L </ MML：MI> </ MML：MROW> <MML：MROW> <MML：MN> 2 </ MML ：Mn> </ mml：mrow> </ mml：msub> </ mml：math> -gain和<mml：math altimg =“si2.gif”display 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Four‐Bits‐Per‐Cell Operation in an HfO 22 ‐Based Resistive Switching Device

摘要

Four‐Bits‐Per‐Cell Operation in an HfO ₂2 ‐Based Resistive Switching Device