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首页> 外文期刊>Semiconductors >Effective Mass Model Supported Band Gap Variation in Cobalt-Doped ZnO Nanoparticles Obtained by Co-Precipitation
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Effective Mass Model Supported Band Gap Variation in Cobalt-Doped ZnO Nanoparticles Obtained by Co-Precipitation

机译:通过共沉淀获得的钴掺杂ZnO纳米粒子的有效质量模型支持的带隙变化

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Zn1 -xCoxO (x = 0, 0.01, 0.03, 0.05) nanoparticles were synthesized using co-precipitation method. Shift in peaks of XRD patterns for 2 theta values has been observed. The changes in 2 theta value for different peaks for different samples are studied systematically. Dislocation densities (delta) for the samples are calculated and correlated with observed shift in 2 theta values for all the samples. UV-Vis study has been performed to understand the effect of cobalt doping on optical band gap. The band gap shows a cubic variation with dopant concentration (x). The nature of band gap variation has been explained and supported by effective mass model. Samples are also characterized by SEM and EDX to understand the surface morphology and elemental composition.
机译:使用共沉淀法合成Zn1 -XcoxO(X = 0,0.01,0.03,0.05)纳米颗粒。 已经观察到XRD模式的峰值转变为2个θ值。 系统地研究了不同样本的不同峰值的2个Theta值的变化。 计算样品的脱位密度(Delta)与所有样本的2个θ值中观察到的变化相关。 已经进行了UV-VIS研究以了解钴掺杂对光带间隙的影响。 带隙显示具有掺杂剂浓度(X)的立方变化。 已经解释和支持带隙变化的性质并得到了有效的质量模型。 样品的特征还通过SEM和EDX来了解表面形态和元素组成。

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