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机译:基于在(X)Ga1-x的电导电天线的电气和热性能,具有变质缓冲层的(x> 0.3),用于产生太赫兹辐射
Russian Acad Sci Inst Ultra High Frequency Semicond Elect Moscow 117105 Russia;
Russian Acad Sci Inst Ultra High Frequency Semicond Elect Moscow 117105 Russia;
Russian Acad Sci Inst Ultra High Frequency Semicond Elect Moscow 117105 Russia;
Russian Acad Sci Inst Ultra High Frequency Semicond Elect Moscow 117105 Russia;
Russian Acad Sci Inst Ultra High Frequency Semicond Elect Moscow 117105 Russia;
Russian Acad Sci Inst Ultra High Frequency Semicond Elect Moscow 117105 Russia;
Russian Acad Sci Inst Ultra High Frequency Semicond Elect Moscow 117105 Russia;
Russian Acad Sci Inst Ultra High Frequency Semicond Elect Moscow 117105 Russia;
Russian Acad Sci Inst Ultra High Frequency Semicond Elect Moscow 117105 Russia;
机译:基于在(X)Ga1-x的电导电天线的电气和热性能,具有变质缓冲层的(x> 0.3),用于产生太赫兹辐射
机译:基于锰铁氧体纳米粒子的光电导天线增强型太赫兹辐射产生
机译:大孔径光导天线产生太赫兹辐射增强的宽带太赫兹
机译:变质缓冲剂设计对MHEMT纳米异质结构In_(0.7)Al_(0.3)As / In_(0.7)Ga_(0.3)As / In_(0.7)Al_(0.3)As / GaAs的电物理和结构性质的影响
机译:用于片上太赫兹波辐射和检测的集成光电导天线的设计,制造和表征。
机译:锰铁氧体纳米粒子增强光电导天线的太赫兹辐射产生
机译:基于锰铁氧体纳米粒子的光电导天线增强型太赫兹辐射产生