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The Theory of SERS on Semiconductor and Dielectric Substrates

机译:半导体和介电基板上的SERS理论

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摘要

It is demonstrated that the reason for SERS on dielectric and semiconductor substrates is enhancement of the electric field in the regions of the tops of surface roughness with a very small radius or a very large curvature. The enhancement depends on the dielectric constant of the substrate and is stronger for a larger dielectric constant. It is indicated that the enhancement on dielectrics and semiconductors is weaker than on metals with the same modulus of the dielectric constant. The result obtained is confirmed by experimental data on the enhancement coefficients obtained for various semiconductor and dielectric substrates.
机译:结果证明,介电和半导体基板上的SERS的原因是具有非常小的半径或非常大的曲率的表面粗糙度顶部区域中的电场的增强。 增强取决于基板的介电常数,并且对于较大的介电常数较强。 结果表明,电介质和半导体上的增强比具有相同介电常数模量的金属较弱。 通过对各种半导体和介电基板获得的增强系数的实验数据来确认所获得的结果。

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