Thermodynamic Analysis of the Behavior of Trimethyl Borate as a Precursor for Chemical Vapor Deposition of Boron-Containing Films

摘要

The chemical vapor deposition (CVD) of boron-containing films involving the trimethyl borate precursor has been modeled in the ranges of pressures 0.03 ≤ Р , Torr ≤ 760 and temperatures 300 ≤ Т , K ≤ 2000. The CVD diagram of this system was found to feature existence fields of the following phase complexes: В + В~(4)С, В4С + В~(2)О~(3), С + В~(2)О~(3)+ В~(4)С, С + В~(2)О~(3), С + В~(2)О~(3)+ НВО~(2), С + НВО~(2), С + В~(4)С, and a В~(4)С phase.