Floating zone growth and scintillation properties of undoped and Ce-doped GdTaO 4 crystals

摘要

AbstractUndoped and Ce-doped GdTaO4single crystals with different Ce concentration were grown by the floating zone method. By X-ray diffraction analysis, we confirmed all the grown crystals do not have any impurity phases. In X-ray induced scintillation spectra, the undoped sample shows a broad emission band around 300–700?nm, and the decay time of this emission is around 500?ns In Ce-doped samples, emissions are observed around 400–700?nm, and the decay time constants are around 50 ns which is a typical value of the 5d-4f transitions of Ce3+. In order to reveal the detailed scintillating behaviors, we measured the temperature dependence of X-ray induced scintillation spectra and revealed the energy transfer mechanisms between two different excited states of luminescent centers.Highlights?Undoped and Ce-doped GdTaO4crystals were grown by floating Zone method.?Luminescent, scintillation and TSL properties of GdTaO4crystals were evaluated.