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首页> 外文期刊>Refractories and Industrial Ceramics >Investigation of the Process of Formation of Hafnium Carbide on Carbon-Carbon Composite Material in the System HfCl4-CH4-Ar
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Investigation of the Process of Formation of Hafnium Carbide on Carbon-Carbon Composite Material in the System HfCl4-CH4-Ar

机译:系统HFCL4-CH4-AR中碳 - 碳复合材料中碳化铪形成过程的研究

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摘要

The first stage in the development of the technique for producing thin coatings of hafnium carbide on carbon-carbon composite material (CCCM) surfaces at relatively low synthesis temperatures for reducing the arising thermal stresses is presented. The process of formation of hafnium carbide on the surface of CCCM in the HfCl4-CH4-Ar system was investigated at 1050A degrees C and atmospheric pressure. The rate of sublimation of hafnium (IV) chloride was studied at different flow rates of the carrier. Histograms showing the particle size distributions of hafnium carbide particles were constructed. A polydisperse distribution of particles on the surface of the CCCM was established with two maxima for the average diameters of 5.4 mu m and 295 nm.
机译:提出了一种在碳 - 碳复合材料(CCCM)表面上在相对低的合成温度下产生碳化铪的薄涂层薄涂层的技术的第一阶段,以降低引发的热应力。 在1050A的C和大气压下,研究了在HFCL4-CH4-AR系统的CCCM表面上形成碳化铪的过程。 在载体的不同流速下研究了铪(IV)氯化铪的升华速率。 构建显示碳化铪颗粒的粒度分布的直方图。 建立了CCCM表面上的颗粒的多分散分布,其中两个最大值为5.4μm和295nm的平均直径。

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