The effect of high-temperature annealing on the temperature dependence of the pseudogap of YBa2Cu3O7-delta single crystals irradiated with high-energy electrons

Khadzhai G. Ya.; Vovk R. V.; Nazyrov Z. F.

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The effect of high-temperature annealing on the temperature dependence of the pseudogap of YBa2Cu3O7-delta single crystals irradiated with high-energy electrons

机译：高温退火对高能量电子照射的YBA2Cu3O7-Delta单晶伪曲面温度依赖性的影响

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摘要

The effect of high-temperature annealing on the basal-plane conductivity of HTSC YBa2Cu3O7-delta single crystals irradiated with high-energy electrons is investigated. It is found that the excess conductivity Delta sigma(T) of YBa2Cu3O7-delta single crystals in a broad temperature range Tf

机译：研究了高温退火对用高能电子照射的HTSC YBA2Cu3O7-Delta单晶的基底平面电导率的影响。发现宽温度范围的YBA2Cu3O7-Delta单晶的过量电导率Delta sigma（t）通过指数温度依赖描述。此外，使用类似于exp（delta ab * / t）关系的Delta sigma的多倍电导率的描述可以在平均场理论方面解释，其中T *作为过渡到Pseudogap的平均场温度（PG）状态，并且在BCS-BEC交叉理论方面是充分描述该伪影像的温度依赖性。高温退火导致意外的现象：伪影桃的绝对值增加，并且通常相对于初始未照射的样品降低过多的电导率。

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《Low temperature physics: Simultaneous Russian - English publication》 |2019年第11期|共4页
作者
Khadzhai G. Ya.; Vovk R. V.; Nazyrov Z. F.;
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作者单位

Kharkov Natl Univ 4 Svobody Sq UA-61022 Kharkov Ukraine;

Kharkov Natl Univ 4 Svobody Sq UA-61022 Kharkov Ukraine;

Kharkov Natl Univ 4 Svobody Sq UA-61022 Kharkov Ukraine;

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正文语种 eng
中图分类工程物理学;
关键词
excess conductivity; electron irradiation; YBaCuO single crystals; crossover; pseudogap state;

机译：过量的电导率;电子照射;YBACUO单晶;交叉;伪焦点状态;

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1. The effect of high-temperature annealing on the temperature dependence of the pseudogap of YBa2Cu3O7-delta single crystals irradiated with high-energy electrons [J] . Khadzhai G. Ya., Vovk R. V., Nazyrov Z. F. Low temperature physics: Simultaneous Russian - English publication . 2019,第11期

机译：高温退火对高能量电子照射的YBA2Cu3O7-Delta单晶伪曲面温度依赖性的影响
2. Temperature dependence of the pseudogap in aluminum and praseodymium-doped YBa2Cu3O7-delta single crystals [J] . Vovk RV, Obolenskii MA, Zavgorodniy AA, Physica, B. Condensed Matter . 2009,第20期

机译：铝和pr掺杂的YBa2Cu3O7-δ单晶中拟缝的温度依赖性
3. The effect of irradiation with high-energy electrons on the superconducting transition and the electrical resistivity anisotropy of YBa2Cu3O7-delta single crystals [J] . Khadzhai G. Ya., Samoilov A. V., Vovk R. V. Low temperature physics: Simultaneous Russian - English publication . 2020,第6期

机译：用高能电子照射对超导转变的影响及YBA2Cu3O7-Delta单晶的电阻率各向异性
4. Accumulation of VO Defects in n-Si at High-temperature Pulse Electron Irradiation: Generation and Annealing Kinetics, Dependence on Irradiation Intensity [C] . M. Krasko, A. Kraitchinskii, A. Kolosiuk, Gettering and defect engineering in semiconductor technology XIV . 2011

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5. Ultrahigh Temperature Annealing and Laser Irradiation: A Potential Route to Producing Valuable Electronic Materials from Coal [D] . Seas, Michael A. 2018

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6. Suppression of the antiferromagnetic pseudogap in the electron-doped high-temperature superconductor by protect annealing [O] . M. Horio, T. Adachi, Y. Mori, -1

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7. Features of Radiation-Defect Annealing in n-Ge Single Crystals Irradiated with High-Energy Electrons [O] . S. V. Luniov, A. I. Zimych, M. V. Khvyshchun, 2019

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The effect of high-temperature annealing on the temperature dependence of the pseudogap of YBa2Cu3O7-delta single crystals irradiated with high-energy electrons

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