On the possibility of estimating the position of the mobility edge for charge carriers using single-particle averages

摘要

The dependence of the position of the mobility edge on the impurity concentration during the transformation of the electronic band structure is considered in a disordered system described by the Lifshitz model. Concentration dependence of the mobility threshold caused by variation of the threshold parameter in the Ioffe-Regel criterion is analyzed. It is demonstrated that the critical concentration of the impurity, which triggers the transformation of the band structure, changes slightly with variation of this parameter, while the corresponding position of the mobility edge at this concentration remains stable. The prerequisites for the existence of such concentration intervals, within which the mobility edge is shifted in proportion to the cubic root of the impurity concentration, are discussed. Published by AIP Publishing.