...
首页> 外文期刊>Nanoscience and Nanotechnology Letters >Fabrication of Vertical Organic Nanowire Arrays via Modified Nanoimprint Lithography
【24h】

Fabrication of Vertical Organic Nanowire Arrays via Modified Nanoimprint Lithography

机译:通过改进的纳米印刷光刻制造垂直有机纳米线阵列

获取原文
获取原文并翻译 | 示例
           

摘要

In this study, polymer high-aspect-ratio vertical organic nanowire arrays with sub-100 nm resolution were fabricated using a new method based on modified nanoimprint lithography, including UV-imprinting process and chemical corrosion solution. Porous anodic alumina membranes are the imprint templates having pore diameters of about 300 nm and 70 nm-90 nm. We performed the fabrication of the polymer nanowire array structures. Replication performance for the UV-curable imprint resister was verified by nanoimprinting technique to replicate the porous anodic alumina templates. Releasing the templates using chemical corrosion of alkali solution, we achieved the polymer nanowire arrays with nanowire diameters of 300 nm and 70 nm-90 nm and depths of 30 mu m and 3 mu m, and the aspect ratio of about 100:1 and 40:1. We herein also discuss the physical performance of the polymer resist and optical performance for high-aspect-ratio structures. The polymer nanowire arrays have potential applications such as electronic and optical devices and new method in complicated and extreme structures.
机译:在该研究中,使用基于改进的纳米压印光刻的新方法制造具有亚100nm分辨率的聚合物高纵横比垂直有机纳米线阵列,包括UV印记过程和化学腐蚀溶液。多孔阳极氧化铝膜是具有约300nm和70nm-90nm的孔径的印记模板。我们进行了聚合物纳米线阵列结构的制造。通过纳米压印技术验证了UV可固化压缩resist试验的复制性能,以复制多孔阳极氧化铝模板。使用碱溶液的化学腐蚀释放模板,我们达到了纳米线直径为300nm和70nm-90nm的聚合物纳米线阵列,深度为30μm和3μm,纵横比为约100:1和40 :1。我们在此还讨论了高纵横比结构的聚合物抗蚀剂和光学性能的物理性能。聚合物纳米线阵列具有诸如电子和光学装置的潜在应用,以及复杂和极端结构的新方法。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号