Science and Technological Understanding of Nano-ionic Resistive Memories (RRAM) | Bentham Science

摘要

Ion transport in the solid state has been regarded as imperative with regards to high energydensity electrochemical storage devices (for instance, batteries) for efficient electric mobility. Of late,there is another niche application involving ion transport in solid state which manifested itself as nonvolatilememory namely memristor. Such memories are classified under the emerging category of novelsolid state Resistive Random Access Memories (RRAM). In 2008, HP labs unveiled the first practicalmemristor device employing TiO2 and non-stoichiometric titania as bilayer stack structure and on bothsides of two titania layers platinum (pt) are used as blocking electrode for ions. It is understood thatswitching fundamentals are correlated to the filamentary conduction in metal oxide memristors owing tothe formation and rupture of the filament-like nano-dendrites, one of the key mechanisms widely acceptedin the arena of memristor analysis. This paper critically reviews the fundamental materials beingemployed in novel memristor memories. It is believed that solid electrolytes (fast ion conductors) arethe fundamental building blocks of these memories. We have chosen a few archetypes, solid electrolytesare considered and their impact on the state-of-art research in this domain is discussed in detail. An indepthanalysis of the fundamentals of resistive switching mechanism involved in various classes ofmemristive devices viz., Electrochemical Metallization Memories (ECM) and Valence Change Memories(VCM) is elucidated. A few important applications of memristors such as neuristor and artificialsynapse in neuromorphic computing are reviewed as well.