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Mixed receptors of AMPA and NMDA emulated using a 'Polka Dot'-structured two-dimensional conjugated polymer-based artificial synapse

机译:使用“圆点结构的二维共轭聚合物的人工突触”模拟AMPA和NMDA的混合受体

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摘要

In a biological synapse, α-amino-3-hydroxy-5-methyl-4-isoxazole propionic acid (AMPA) receptors mediate fast excitatory neurotransmission, whereas N-methyl-D-aspartate (NMDA) receptors trigger an enhanced memory effect; the complementary roles of AMPA and NMDA are essential in short-term plasticity (STP) to enhance memory effect (EME) transition. Herein, we report the design and fabrication of the first two-dimensional (2D) conjugated polymer (CP)-based synaptic transistor. The special design of the 2D CP with nanoscale-segregated 'polka dot'-structured crystalline phases and adjacent amorphous phases emulate the different receptors of NMDA and AMPA on the postsynaptic membrane for the first time. The synergistic effect of mixed receptors distinguishes STP and enhanced memory effect with a critical point, which regulates the threshold level of the enhanced memory effect induction. This effect has not been reported yet. The special structure avoids easy saturation of a single receptor with consecutively increased excitatory postsynaptic current (EPSC) in response to 1200 stimuli. Furthermore, the 2D P3HT synapse successfully emulates activity-dependent synaptic plasticity, such as metaplasticity and homeostatic plasticity, which are advanced forms of plasticity, allowing the self-adaptive ability of a synapse, but have rarely been reported.
机译:在生物突触中,α-氨基-3-羟基-5-甲基-4-异恶唑丙酸(AMPA)受体介导快速兴奋性神经递质,而N-甲基-D-天冬氨酸(NMDA)受体引发增强的记忆效果; AMPA和NMDA的互补作用对于短期可塑性(STP)至关重要,以增强记忆效应(EME)过渡。这里,我们报告了基于第一二维(2D)共轭聚合物(CP)的突触晶体管的设计和制造。使用纳米级隔离的'圆点结构结晶相和相邻无定形阶段的2D CP的特殊设计使得第一次将NMDA和AMPA的不同受体模拟。混合受体的协同效应与临界点区分STP和增强的记忆效应,其调节增强型记忆效应感应的阈值水平。此效果尚未报告。特殊结构避免了单个受体的容易饱和,响应于1200次刺激,连续增加兴奋性的突触后突触电流(EPSC)。此外,2D P3HT突触成功地模拟了依赖性突触可塑性,例如沟槽塑性和稳态可塑性,这些可塑性是先进的可塑性,允许突触的自适应能力,但很少报道。

著录项

  • 来源
    《Nanoscale Horizons》 |2020年第9期|共8页
  • 作者

    Hong Han; Feng Ge; Mingxue Ma;

  • 作者单位

    Institute of Optoelectronic Thin Film Devices and Technology Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin Nankai University Tianjin 300350 China.;

    Academy of Opto-Electronic Technology State Key Lab of Advanced Display Technology Anhui Technology Innovation Center of Special Display and Imaging Technology Hefei University of Technology Hefei 230009 China.;

    Institute of Optoelectronic Thin Film Devices and Technology Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin Nankai University Tianjin 300350 China.;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 分子物理学、原子物理学;工程材料学;
  • 关键词

  • 入库时间 2022-08-20 04:26:19

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