Research of the Possibility to Obtain Structures with Nanometer Layer Thicknesses and Sharp-Cut Interfaces between Them Using Ion-Beam and Reactive Ion-Beam Deposition Processes

摘要

At present, atomic layer deposition and magnetron sputtering processes are used in the production of integrated circuits (IC) to obtain structures with nanometer layer thicknesses and sharp interfaces between them. However, there are also ion-beam and reactive ion-beam deposition processes, which are mainly used to produce multilayer optical coatings. The aim of this work is to study the possibility of obtaining structures with nanometer layer thicknesses and sharp interfaces between them in the processes of ion-beam and reactive ion-beam deposition. The studies were carried out by time-of-flight secondary ion mass spectrometry (SIMS) and spectral ellipsometry methods. Study of the structure Ta (3 nm)/Nb (3 nm)/Ta (3 nm) reveals that ion-beam deposition can form structures with nanometer layer thicknesses and sharp boundaries between them. On the other hand, in reactive ion-beam deposition of the structure Nb (3 nm)/Ta_2O_5 (3 nm)/Nb (3 nm), oxidation occurs on the entire thickness of the metal layer following the metal oxide layer due to ions, atoms, and molecules of oxygen contained in the ion beam.