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首页> 外文期刊>CrystEngComm >Large gamma-CuI semiconductor single crystal growth by a temperature reduction method from an NH4I aqueous solution
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Large gamma-CuI semiconductor single crystal growth by a temperature reduction method from an NH4I aqueous solution

机译:通过降温法从NH4I水溶液中生长大的γ-CuI半导体单晶

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摘要

NH4I has been proven to be a promising cosolvent for cuprous iodide (CuI) single crystal growth from aqueous solutions by the temperature reduction method. In our work, as compared with NH4Cl and NH4Br, NH4I offers more advantages for single crystal growth, such as by remarkably increasing the solubility and growth rate of CuI crystals, effectively reducing the impurity concentration, and enhancing the crystal quality and crystallinity. A regular, centimeter-sized, high optical quality single crystal was successfully obtained using NH4I as a cosolvent. The electronic and optical properties of the as-grown crystal were characterized by Hall-effect measurements and optical transmission and photoluminescence spectra, respectively. The results demonstrated that the CuI crystal is conductive (high p-type mobility of 12.81 cm(2) V-1 s(-1)) and transparent (great transmittance over 80%).
机译:NH4I已被证明是一种通过降温法从水溶液中生长碘化亚铜(CuI)单晶的有前途的助溶剂。在我们的工作中,与NH4Cl和NH4Br相比,NH4I为单晶生长提供了更多优势,例如,通过显着提高CuI晶体的溶解度和生长速率,有效降低杂质浓度并提高晶体质量和结晶度。使用NH4I作为助溶剂成功获得了规则,厘米大小,高光学质量的单晶。分别通过霍尔效应测量,光透射和光致发光光谱来表征所生长晶体的电子和光学性质。结果表明,CuI晶体是导电的(12.81 cm(2)V-1 s(-1)的高p型迁移率)和透明的(透射率超过80%)。

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