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A Density Functional Theory-Based Scheme to Compute the Redox Potential of a Transition Metal Complex: Applications to Heme Compound

机译:基于密度的基于功能理论的方案来计算过渡金属络合物的氧化还原电位:血红素化合物的应用

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We estimated the redox potential of a model heme compound by using the combination of our density functionals with a computational scheme, which corrects the solvation energy to the normal solvent model. Among many density functionals, the LC-BOP12 functional gave the smallest mean absolute error of 0.16 V in the test molecular sets. The application of these methods revealed that the redox potential of a model heme can be controlled within 200 mV by changing the protonation state and even within 20 mV by the flipping of the ligand histidine. In addition, the redox potential depends on the inverse of the dielectric constant, which controls the surroundings. The computational results also imply that a system with a low dielectric constant avoids the charged molecule by controlling either the redox potential or the protonation system.
机译:我们通过使用使用计算方案的密度函数的组合来估计模型血红化合物的氧化还原电位,这将溶剂化能量校正到正常溶剂模型。 在许多密度函数中,LC-BOP12功能在测试分子集中提供了0.16V的最小平均绝对误差。 这些方法的应用揭示了通过改变原料状态甚至通过配体组氨酸的翻转来改变原料状态且甚至在20mV以内来控制模型血红素的氧化还原电位。 另外,氧化还原电位取决于控制周围环境的介电常数的倒数。 计算结果也意味着具有低介电常数的系统通过控制氧化还原电位或质子化系统来避免带电分子。

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