Enhanced photosensitivity of highly spectrum selective cylindrical gate In1-xGaxAs nanowire MOSFET photodetector

摘要

In this study, an In1-xCxAs nanowire metal oxide semiconductor field effect transistor (MOSFET) photosensor with zinc oxide (metallic ZnO), which act as a transparent optical window over channel has been investigated. The electrical characterization of In1-xCxAs nanowire MOSFET was compared to their silicon counterpart. In1-xCxAs nanowire MOSFET responds to visible-near infrared (600 nm to 1.7 nm) under light illumination as opposite to silicon nanowire MOSFET, which respond to ultraviolet to visible spectra (Peak @ 400 nm). ZnO-SiO2-InGaAs device is characterized by responsivity (R lambda) of 0.25 A W-1, photoconductive gain of 65 x 10(5)%, with reasonable available photocurrent of x10(8) and sensitivity (I-illumination/I-dark) of x 10(6). The present work demonstrates the potential for high performance visible to near-infrared In1-xCxAs detectors with tunable band gaps for applications like interactive display, indoor communication and optical sensors.