Acoustical-phonon and polaron mode-induced optical parametric amplification in transversely magnetized III-V semiconductors

摘要

In this paper, a detailed analytical investigation is made to study the acoustical-phonon (AP) and polaron mode-induced optical parametric amplification (OPA) in transversely magnetized III-V semiconductors. Making use of hydrodynamic model of (one component) semiconductor plasma and adopting the coupled mode approach, an explicit expression is obtained for the threshold pump electric field (E-AP,E-LOP) and gain coefficients (g(AP,LOP)) of AP and polaron mode-induced OPA. Externally applied magnetostatic field (B0) and doping concentration (n(0)) are incorporated in terms of electron cyclotron frequency (omega(c)) and plasma frequency (omega(p)), respectively. The dependence of E-AP,E-LOP on wave number (k), omega(c) and omega(p) and the dependence of g(AP,LOP) on omega(c), omega(p) and pump electric field (E-0) are explored. Numerical estimates made for n-InSb-CO2 system suggest that the material parameters and externally applied magnetostatic field play an important role in reducing E-AP,E-LOP and enhancing g(AP,LOP). We find gLOP = 7.36 g(AP) (when omega(c) similar to omega(0)); though E-LOP is smaller than E-AP under identical conditions. The formulation developed in this paper highlights the importance of Frohlich interaction in transversely magnetized III{V semiconductors for OPA and replaces the conventional idea of using high power pulsed lasers. The results obtained in this analysis suggest that by controlling the material parameters and externally applied magnetostatic field, the performance of acoustical and polaron mode-induced optical parametric amplifiers may be improved. It is expected that a cheaper efficient optical parametric amplifier can be fabricated using n-InSb-CO2 system as the outcome of this research work.