The effect of channel uniaxial strain on thermal conductivity of graphene nano-ribbon field effect transistor

摘要

The effect of channel uniaxial strain on thermal conductivity of graphene nano-ribbon field effect transistor (GNRFET) is analyzed by self-consistent Huckel method. The supposed strains are tensile and its values are 2% to 24% of lattice constant. All of the assumed strains are applied to the channel length direction. Energy band gap, density of states (DOS), phonon transmission, thermal conductivity, and I-V characteristics of the GNRFET have been calculated. The results show that by increasing the strain, the energy band gap of the channel is increased and the drain current is decreased. Also by increasing the band gap, phonon transmission is decreased. Maximum phonon transmission occurs in 8% strain. By considering all of these parameters, the results show that there is a maximum thermal conductivity versus temperature in 8% uniaxial strain that is more than the bare one and its value is decreased intensively in 16% and 24% strain. This is due to maximum phonon transmission that is observed in 8% strain and increasing the DOS around the energy band gap in this value. Also, it is observed that in the energy range of more than 0.75 eV, by increasing the strain, thermal conductivity is increased.