Effect of uniaxial strain on the current-voltage characteristics of graphene nanoribbon field-effect transistors

摘要

We present a simulation study on the current-voltage characteristics of a dual-gated Graphene Nanoribbon Field Effect Transistor (GNR-FET) when its channel is under uniaxial tensile strain. Our study uses a fully analytical model based on effective mass approximation and semiclassical ballistic transport. The model incorporates the effects of edge bond relaxation and third nearest neighbor (3NN) interaction. It is found that the current under a fixed bias can change several times with applied uniaxial strain and these changes are strongly related to strain induced changes in both band gap and effective mass of the GNR. Furthermore, other characteristics as transconductance, gate capacitance and cutoff frequency are also calculated for various strain values.