Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors

摘要

In this paper, we perform a modeling and simulation study on strained armchair graphenennanoribbon u0002AGNRu0003. Two uniaxial strain models based on a tight binding method are comparednwith results from first-principles calculation. Tunneling field effect transistors u0002TFETsu0003 withnchannels made of strained AGNR of different widths are modeled and simulated by a ballisticnquantum transport model based on nonequilibrium Green’s function and nonparabolic effectivenmass approximation. Compared with TFETs with narrow AGNR, those with strained wide AGNRncan achieve better device performance.