Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well (vol 59, pg 900, 2014)

Galiev G. B.; Vasiliev A. L.; Imamov R. M.; Klimov E. A.; Maltsev P. P.; Pushkarev S. S.; Presniakov M. Yu.; Trunkin I. N.

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Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well (vol 59, pg 900, 2014)

机译：在量子阱中具有InAs插入物的InP衬底上的InAlAs / InGaAs / InAlAs HEMT异质结构的结构和电性能（第59卷，第900页，2014）

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《Crystallography reports》 |2015年第3期|共1页
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Galiev G. B.; Vasiliev A. L.; Imamov R. M.; Klimov E. A.; Maltsev P. P.; Pushkarev S. S.; Presniakov M. Yu.; Trunkin I. N.;
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1. Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well (vol 59, pg 900, 2014) [J] . Galiev G. B., Vasiliev A. L., Imamov R. M., Crystallography reports . 2015,第3期

机译：在量子阱中具有InAs插入物的InP衬底上的InAlAs / InGaAs / InAlAs HEMT异质结构的结构和电性能（第59卷，第900页，2014）
2. Effect of Strongly Mismatched GaAs and InAs Inserts in a InAlAs Buffer Layer on the Structural and Optical Properties of Metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs Quantum-Confined Heterostructures [J] . Solovev V. A., Chernov M. Yu, Komkov O. S., JETP Letters . 2019,第6期

机译：强烈不匹配的GaAs和InAs在Inalas缓冲层中的影响在变质InAs（Sb）/ InGaAs / Inalas / GaAs量子限制异质结构的结构和光学性质上
3. Structural and electrical properties of quantum wells with nanoscale InAs inserts in In _y Al_(1 - Y) As/In _x Ga _(1 - X) As heterostructures on InP substrates [J] . Vasilev A.L., VasilEvskii I.S., Galiev G.B., Crystallography reports . 2011,第2期

机译：In_y Al_（1- Y）As / In _x Ga _（1- X）作为InP衬底上的异质结构的纳米InAs量子阱的结构和电学性质
4. Electrical properties of InAlAs/InGaAs HEMT structures on InP substrates under the optimum thermal cleaning condition grown by MBE [C] . Takakusaki, M., Ozaki, Indium Phosphide and Related Materials, 1992., Fourth International Conference on . 1992

机译：MBE生长的最佳热清洗条件下InP衬底上InAlAs / InGaAs HEMT结构的电性能
5. InGaAs/InAlAs quantum wells for 1.3 micron electro-absorption modulators on GaAs substrates. [D] . Shen, Lei. 1997

机译：GaAs衬底上用于1.3微米电吸收调制器的InGaAs / InAlAs量子阱。
6. Optimization of MBE Growth Conditions of In0.52Al0.48As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers [O] . Piotr Gutowski, Iwona Sankowska, Tomasz Słupiński, 2019

机译：InGaAs / InAlAs / InP量子级联激光器的In0.52Al0.48As波导层MBE生长条件的优化
7. Erratum to: “Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well” [O] . G. B. Galiev, A. L. Vasiliev, R. M. Imamov, 2015

机译：错误到：“InP衬底上的Inalas / InGaAs / Inalas HEMT异质结构的结构和电性能与inaS阱插入量”
8. Growth and properties of InGaAs/FeAl/InAlAs/InP heterostructures for buried reflector/interconnect applications in InGaAs thermophotovoltaic devices [R] . Ringel, S. A. , Sacks, R. N. , Qin, L. , 1998

机译：用于InGaas热光电器件中埋入式反射器/互连应用的InGaas / Feal / Inalas / Inp异质结构的生长和性质

Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well (vol 59, pg 900, 2014)

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