Haze in sapphire crystals grown by SAPMAC method

摘要

Haze defect in SAPMAC method grown sapphire crystal was studied in detail. It is shown that haze is composed by a large number of CO_2 bubbles, and haze always appears in the axis region of the crystal since the bubbles formed in front of the crystallization surface are most always draged to the convection rolls in front of the central part of the crystallizaiton surface by melt and then engulfed by the rolls. Moreover, the effects of pulling rate on the formation of haze were analyzed and means for restraining haze was suggested.