首页> 外国专利> RESISTANCE HEATED SAPPHIRE SINGLE CRYSTAL INGOT GROWER, METHOD OF MANUFACTURING RESISTANCE HEATED SAPPHIRE SNGLE CRYSTAL INGOT, SAPPHIRE SNGLE CRYSTAL INGOT, AND SAPPHIRE WAFER

RESISTANCE HEATED SAPPHIRE SINGLE CRYSTAL INGOT GROWER, METHOD OF MANUFACTURING RESISTANCE HEATED SAPPHIRE SNGLE CRYSTAL INGOT, SAPPHIRE SNGLE CRYSTAL INGOT, AND SAPPHIRE WAFER

机译:电阻加热的蓝宝石单晶锭生长器,制造电阻加热的蓝宝石单晶锭,蓝宝石单晶锭和蓝宝石晶片的方法

摘要

Provided are a resistance heated sapphire single crystal ingot grower, a method of manufacturing a resistance heated sapphire single crystal ingot, a sapphire single crystal ingot, and a sapphire wafer. The resistance heated sapphire single crystal ingot grower comprises according to an embodiment includes a chamber, a crucible included in the chamber and containing an alumina melt, and a resistance heating heater included inside the chamber and heating the crucible.
机译:提供了一种电阻加热的蓝宝石单晶锭生长器,一种制造电阻加热的蓝宝石单晶锭的方法,蓝宝石单晶锭和蓝宝石晶片。根据一个实施例,电阻加热的蓝宝石单晶锭生长器包括:腔室;包含在该腔室中并容纳氧化铝熔体的坩埚;以及包括在腔室内并加热坩埚的电阻加热加热器。

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