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Optimizing the dicing saw parameters of 60 mu m wafer dicing street

机译:优化60 mu M晶圆切割街的切割锯参数

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摘要

Wafer surface dicing chipping can expand to impact chip circuits, which may cause serious defects during the IC assembly process, potentially resulting in IC circuit function failure. Throughout the semiconductor wafer process, the street design of wafer dicing is gradually narrowed, that raising the importance of controlling chipping performance. To obtain the key factor of dicing parameters, this paper studies and evaluates the dicing of a wafer with a street width of 60 mu m and thickness of 200 mu m using mechanical dicing saw and diamond dicing blade. In this design of experiment, experimental data were analyzed using analysis of variance to obtain key parameters for surface chipping. The results show that high cutting spindle speed of 50,000 rpm with shallow cutting depth of 50 mu m provides better surface chipping performance, and improves chipping of abnormal base with a blade dicing saw.
机译:晶片表面切割切削可以扩展到冲击芯片电路,这可能在IC组装过程中引起严重缺陷,可能导致IC电路功能故障。 在整个半导体晶片过程中,晶圆切割的街道设计逐渐变窄,从而提高控制切削性能的重要性。 为了获得切割参数的关键因素,本文研究并评估了使用机械切割锯和金刚石切割刀片的散道宽度为60μm和200μm的厚度的晶片的切割。 在这种实验设计中,使用差异分析来分析实验数据,以获得表面切削的关键参数。 结果表明,50,000 rpm的高切割主轴速度,浅切削深度为50μm,提供更好的表面切削性能,并通过刀片切割锯改善异常底座的切削。

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