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Design and simulation of a novel RF MEMS shunt capacitive switch with a unique spring for Ka-band application

机译:新型RF MEMS分流电容开关的设计与仿真,具有独特弹簧的KA波段应用

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RF-MEMS switches may be divided into capacitive and metal-to-metal types in terms of type of connection. In capacitive switches in the OFF-state the beam does not attach to the transmission line due to the presence of a thin dielectric layer and it gets released easily. Capacitive switches are better compared with the metal-to-metal types due to their ability to transmit signals of higher frequency and power. In this paper, a novel RF MEMS shunt capacitive switch with a unique spring design is proposed. The proposed design benefits from high isolation, low loss, low actuation voltage, small size and weight compared to similar switches and is designed for application in the Ka-band. Step structure is used in the mechanical design of the switch to reduce the air gap between the bridge and the transmission line that has resulted in reduction of actuation voltage to 2.2V. The proposed switch has been placed upon a coplanar waveguide (CPW) line with an impedance of 50 Ohms. SiO2 with a thickness of 1000 angstrom has been used as dielectric to increase isolation and down-state capacitance. The unique design of the spring results in the reduction of stress to a minimum at all points of the switch especially the springs at the time of applying the actuation voltage. This advantage would reduce switch failures as time passes and results in increased life of the switch. Up-state capacitance is 93.3 fF and down-state capacitance is 2.64 pF. Therefore, a capacitive ratio of 28 is obtained. The dynamic behavior of the switch is studied by using the COMSOL Multiphysics software package and the RF characteristics have been obtained by using the HFSS software and show good RF performance. The results show that in the up-state, the designed switch including S-11 is less than -11.5dB and S-21 is more than -0.85dB at 1-40GHz. In the down-state, the switch has excellent isolation in the Ka-band. Maximum isolation is -71dB that occurs at the resonance frequency of 30.5GHz.
机译:在连接类型方面,RF-MEMS开关可以分为电容性和金属到金属类型。在关闭状态下的电容开关中,由于存在薄介电层,光束不附加到传输线,并且容易被释放。与它们传输更高频率和功率的信号的能力,电容开关与金属到金属类型更好。本文提出了一种具有独特弹簧设计的新型RF MEMS分流电容开关。与相似开关相比,所提出的设计受益于高隔离,低损耗,低致动电压,体积小,体重,并且设计用于在KA波段中的应用。步骤结构用于开关的机械设计,以减小桥梁和传输线之间的气隙,导致致动电压降低到2.2V。所提出的开关已放置在共面波导(CPW)线上,其阻抗为50欧姆。厚度为1000埃的SiO2已被用作电介质以增加隔离和下态电容。弹簧的独特设计导致在施加致动电压时的开关的所有点处的应力降低到最小点。随着时间的推移,这种优势会减少开关故障,并导致开关的增加的寿命。 UP状态电容为93.3 FF和下态电容为2.64 PF。因此,获得电容比为28。通过使用COMSOL MultiphySics软件包研究了交换机的动态行为,并且通过使用HFSS软件获得了RF特性并显示出良好的RF性能。结果表明,在上线,包括S-11的设计开关小于-11.5dB,S-21在1-40GHz处大于-0.85dB。在下状态下,开关在KA波段中具有出色的隔离。最大隔离为-71dB,在谐振频率为30.5GHz时出现。

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