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Direct analysis of high-purity cadmium by electrothermal vaporization-inductively coupled plasma optical emission spectrometry

机译:电热汽化电感耦合等离子体光发射光谱法直接分析高纯度镉

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The paper presents the original technique of trace analysis of solid cadmium samples by the optical emission spectrometry with inductively coupled plasma in combination with the electrothermal vaporization (ETV-ICP-OES). The temperature program for heating ETV provides almost complete evaporation of cadmium (at 900 degrees C) and the subsequent vaporization of analytes when the temperature ETV rises up to 2400 degrees C. Separate vaporization of matrix and analytes provides reducing of spectral interferences, which ensures lower the limits of detection of the analytes (LODs). Evaluation of the analytical characteristics of the proposed technique shows that the ETV-ICP-OES allows us to reduce the detection limits of Al, Au, Be, Bi, Co, Cr, Fe, Ga, In, Mn, Ni, Re, Sn and V from 3 to 670 times compared with traditional ICP-OES analysis of 2% cadmium solutions. The accuracy of proposed technique was confirmed by analysis of cadmium samples by an independent ICP-MS technique and by addition and recovery experiment.
机译:本文用电热耦合(EtV-ICP-OES)结合电感耦合等离子体的光发射光谱法呈现固体镉样品的痕量分析原始技术。加热ETV的温度程序几乎完全蒸发镉(900摄氏度)和随后的分析物蒸发,当温度ETV高达2400℃时,分离基质和分析物的蒸发提供频谱干扰的减少,这确保了较低的光谱干扰检测分析物(LOD)的限制。评估所提出的技术的分析特征表明,ETV-ICP-OES允许我们减少Al,Au,Be,Bi,Co,Cr,Fe,Ga,In,Mn,Ni,Re,Sn的检测限制与2%镉溶液的传统ICP-OES分析相比,V 3至670次。通过独立的ICP-MS技术和加法和恢复实验分析镉样品来确认所提出的技术的准确性。

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