Characterization of in-plane structures of vapor deposited thin-films of distyryl-oligothiophenes by grazing incidence x-ray diffractometry

摘要

The in-plane structures of vapor deposited ultrathin films of distyryl-oligothiophenes (DS-2T) on SiO2 substrate were characterized by grazing incidence x-ray diffractometry (GIXD). Two polymorphs, low-temperature and high-temperature phases, were identified, and the two dimensional unit cell parameters were determined for each polymorph. The polymorphism depends on substrate temperature and film thickness. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.