Characterization of AlInN/AlN/GaN FET structures using x-ray diffraction, x-ray reflectometry and grazing incidence x-ray fluorescence analysis

摘要

The structural parameters of AlInN/AlN/GaN high mobility field effect transistors (FETs) determine their electrical properties. The AlN-interlayer (spacer) thickness especially plays an important role to enhance the mobility and the density of the two dimensional electron gas (2DEG). However, structural characterization of this ultra-thin AlN-interlayer is ambiguous when only high resolution x-ray diffraction (HRXRD) and x-ray reflectometry (XRR) are taken into account. Here a combined layer analysis was performed using HRXRD, XRR and grazing incidence x-ray fluorescence (GIXRF) for the determination of the AlN-interlayer thickness. A sample series of AlInN/AlN/GaN FETs on Si(1 1 1) has been grown and analysed. The growth time of the AlN-interlayer was changed from 0 to 12 s and the AlInN barrier was grown nearly lattice matched to GaN with a nominal thickness of 5 nm. By the combination of HRXRD, XRR, GIXRF and simultaneous simulation of the data the determination of the spacer thickness was successfully performed.