Reactor produces six-inch GoN-on-sapphire wafers

摘要

A reactor that can quickly produce dozens of high-quality six-inch GaN-on-sapphire or SiC wafers in each batch has reportedly been developed by Technologies and Devices International Inc., Silver Spring, Md in a program funded by the Missile Defense Agency. A hydride vapor-phase epitaxy (HVPE) process was developed to reduce the costs of GaN components used for advanced radar and power systems. Through extensive modeling and testing, TDI developed a HVPE reactor that can produce more than a dozen high-quality, 2-inch-diameter wafers at the same time. TDI has also created the world's first 6-inch GaN-on-sapphire wafer.