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Size-Dependent Phase Diagram of Nanoscale Alloy Drops Used in Vapor-Liquid-Solid Growth of Semiconductor Nanowires

机译:半导体纳米线的汽-液-固生长中使用的纳米合金滴的尺寸相关相图

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摘要

We use in situ observations during high-temperature transmission electron microscopy to quantify the exchange of semiconductor material between Au-Ge vapor-liquid-solid seed drops and Ge nanowires (NWs). By performing simultaneous measurements under identical conditions on arrays with systematic variations in NW diameter, we establish the nanoscale size dependence of the temperature-dependent equilibrium composition of the Au-Ge binary alloy. We find a significantly enhanced Ge solubility for drops on thin NWs compared to thicker ones. The controlled modification of the surface of the NW by an ordered carbon shell leads to drastic changes in the solubility.
机译:我们在高温透射电子显微镜中使用原位观察来量化Au-Ge气液固种子滴与Ge纳米线(NWs)之间的半导体材料交换。通过在相同条件下对具有NW直径的系统变化的阵列进行同时测量,我们建立了Au-Ge二元合金随温度变化的平衡成分的纳米尺度尺寸依赖性。我们发现与较厚的NW相比,较细的NW上的液滴的Ge溶解度显着提高。有序碳壳对NW表面的受控改性导致溶解度发生剧烈变化。

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