Structural and electrical properties of pulsed laser deposited BaPbO3 conductive thin films and its effect on the ferroelectric properties of PbZr0.52Ti0.48O3/BaPbO3 heterostructures

摘要

BaPbO3 (BPO) thin films of different thickness were deposited by pulsed laser deposition on p type Si/SiO2 substrates. The influence of film thickness on the structural and electrical properties is studied. It is found that the BPO thin films of 300 nm has good crystallinity and grain size of 21nm. The carrier mobility increases with film thickness for films above 150 nm due to the ordered structure resulting in large grain size and small number of boundaries which enhances charge transport.